 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PD- 93843A SMPS MOSFET IRF7463 HEXFET(R) Power MOSFET l Applications High Frequency DC-DC Converters with Synchronous Rectification VDSS 30V RDS(on) max 0.008 ID 14A Benefits Ultra-Low RDS(on) at 4.5V VGS l Low Charge and Low Gate Impedance to Reduce Switching Losses l Fully Characterized Avalanche Voltage and Current l SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. 14 11 110 2.5 1.6 0.02 12 -55 to + 150 Units A W W/C V Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Max. 50 Units C/W Typical SMPS Topologies l Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers Notes through are on page 7 www.irf.com 1 3/30/00 IRF7463 Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. Typ. Max. Units 30 --- --- V --- 0.029 --- V/C --- 0.0063 0.0080 Static Drain-to-Source On-Resistance --- 0.0074 0.0095 --- 0.0105 0.020 Gate Threshold Voltage 0.6 --- 2.0 V --- --- 20 A Drain-to-Source Leakage Current --- --- 100 Gate-to-Source Forward Leakage --- --- 200 nA Gate-to-Source Reverse Leakage --- --- -200 Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1mA VGS = 10V, ID = 14A VGS = 4.5V, ID = 12A VGS = 2.8V, ID = 3.5A VDS = VGS, ID = 250A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 100C VGS = 12V VGS = -12V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 31 --- --- --- --- --- --- --- --- --- --- Typ. --- 34 7.5 13 20 16 41 44 3110 850 130 Max. Units Conditions --- S VDS = 24V, ID = 14A 51 I D = 14A 11 nC VDS = 24V 20 VGS = 5.0V, --- VDD = 15V, --- ID = 1.0A ns --- RG = 6.0 --- VGS = 4.5V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. --- --- --- Max. 320 14 0.25 Units mJ A mJ Diode Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 64 99 2.5 A 110 1.2 96 150 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 2.5A, VGS = 0V TJ = 25C, IF = 2.5A di/dt = 100A/s D S 2 www.irf.com IRF7463 1000 VGS 15V 10V 4.5V 3.5V 3.0V 2.7V 2.5V BOTTOM 2.0V TOP 1000 I D , Drain-to-Source Current (A) 100 10 1 I D , Drain-to-Source Current (A) VGS 15V 10V 4.5V 3.5V 3.0V 2.7V 2.5V BOTTOM 2.0V TOP 100 10 2.0V 0.1 2.0V 20s PULSE WIDTH TJ = 150 C 1 10 100 0.01 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 1 0.1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1000.00 1000 ID , Drain-to-Source Current (A) 100.00 T J = 150C ISD , Reverse Drain Current (A) 100 TJ = 150 C 10 10.00 TJ = 25 C 1 1.00 T J = 25C VDS = 15V 20s PULSE WIDTH 2.0 2.5 3.0 3.5 4.0 4.5 0.10 0.1 0.0 V GS = 0 V 0.4 0.8 1.2 1.6 VGS, Gate-to-Source Voltage (V) VSD ,Source-to-Drain Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage www.irf.com 3 IRF7463 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 14A 1.5 R DS (on) , Drain-to-Source On Resistance ( ) 2.0 0.0080 0.0075 VGS = 4.5V 1.0 0.0070 0.5 0.0065 VGS = 10V 0 20 40 60 80 100 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 0.0060 ID , Drain Current (A) TJ , Junction Temperature ( C) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. On-Resistance Vs. Drain Current R DS(on) , Drain-to -Source On Resistance ( ) 800 EAS , Single Pulse Avalanche Energy (mJ) TOP BOTTOM 600 ID 6.3A 11A 14A 0.016 0.012 400 ID = 14A 0.008 200 0 25 50 75 100 125 150 0.004 2.0 4.0 6.0 8.0 10.0 Starting TJ , Junction Temperature ( C) VGS, Gate -to -Source Voltage (V) Fig 7. Maximum Avalanche Energy Vs. Drain Current Fig 8. On-Resistance Vs. Gate Voltage 4 www.irf.com IRF7463 5000 VGS , Gate-to-Source Voltage (V) 4000 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 10 ID = 14A VDS = 24V 8 C, Capacitance (pF) 3000 Ciss 6 2000 4 Coss 1000 2 0 1 Crss 10 100 0 0 10 20 30 40 50 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 P DM t1 0.1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t2 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7463 SO-8 Package Details D -B - D IM 5 IN C H E S M IN .0532 .0040 .014 .0 075 .1 89 .150 MAX .0688 .0098 .018 .0 098 .1 96 .157 M IL LIM E T E R S M IN 1 .35 0 .10 0 .36 0 .19 4 .80 3 .81 M AX 1 .75 0 .25 0 .46 0.25 4.98 3 .99 A 6 5 H 0.2 5 (.0 10 ) M AM 5 8 E -A - 7 A1 B C D E e e1 H K 0 .10 (.00 4) L 8X 6 C 8X 1 2 3 4 e 6X e1 A K x 45 .050 B A S IC .025 B A S IC .2 284 .011 0 .16 0 .2 440 .019 .050 8 1.2 7 B A S IC 0.6 35 B A S IC 5 .80 0 .28 0 .41 0 6.20 0 .48 1.27 8 -CB 8X 0 .25 (.01 0) A1 M CASBS L R E CO M M E ND E D F O O TP R IN T 0 .72 (.02 8 ) 8X N O TE S : 1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2. 2 . C O N TRO L LIN G D IM EN SIO N : IN C H . 3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S). 4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA . 5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6). 6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE.. 6 .46 ( .25 5 ) 1 .78 (.07 0) 8X 1.27 ( .0 50 ) 3X SO-8 Part Marking 6 www.irf.com IRF7463 SO-8 Tape and Reel TER M IN AL N UM B ER 1 1 2.3 ( .484 ) 1 1.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) F EE D D IRE C TIO N N OT E S : 1 . CO NT RO L L ING DIM E NSIO N : M IL L IM E T E R . 2 . AL L DIM E NS ION S ARE SHO W N IN M ILL IM E TER S (INC HE S ). 3 . OU TL IN E CO N FO RM S T O E IA -4 8 1 & E IA -5 4 1 . 33 0.00 (12.992) M AX . 14.4 0 ( .566 ) 12.4 0 ( .488 ) N O T ES : 1 . CO NT RO LL ING D IM EN SIO N : M ILLIME TER . 2 . O U TLIN E C O NF O RM S T O E IA-48 1 & E IA -54 1. Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Starting TJ = 25C, L = 3.3mH RG = 25, IAS = 14A. ISD 14A, di/dt 93A/s, V DD V(BR)DSS, TJ 150C When mounted on 1 inch square copper board, t<10 sec IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 3/00 www.irf.com 7 |
Price & Availability of IRF7463
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |